leshan radio company, ltd. l2n7002fwt1g sc?70 device marking shipping ordering information l2n7002fwt1g 7f 3000 tape & reel m 7f 7f = device code m =month code marking diagram & pin assignment 3 2 1
l2n7002fwt3g 7f 10000 tape & reel thermal characteristics characteristic symbol max unit total device dissipation fr?5 board (note 1.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate,(note 2.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j, t stg -55 to +150 c 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. n?channel sc70 ? small signal mosfet 30 volts ? gate source drain 3 2 1 (top view) simplified schematic we declare that the material of product are halogen free and compliance with rohs requirements. rev .o 1/4 1 2 3 features r ds(on) Q 8 ? @v gs =4v r ds(on) Q 13 ? @v gs =2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability capable doing cu wire bonding applications power management in note book portable equipment battery powered system load switch esd protected:1000v s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. ? s-l2n7002fwt1g s-l2n7002fwt3g s-l2n7002fwt1g
leshan radio company, ltd. l2n7002fwt1g,s-l2n7002fwt1g rev .o 2/4 symbol parameter limit min typ max unit static bv dss drain-source breakdown voltage v gs =0v, i d =250 a 30 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 0.8 1.5 v i gss gate-body leakage v ds =0v, v gs =20v 10 a i dss zero gate voltage drain current v ds =30v, v gs =0v 1 a v gs =4v, i d =10ma 5 8 r ds(on) drain-source on-resistance* v gs =2.5v, i d =1ma 7 13 v sd diode forward voltage * i s =200ma, v gs =0v 1.2 v dynamic qg total gate charge 4.9 qgs gate-source charge 2.1 qgd gate-drain charge v ds =25v, v gs =10v, i d =0.22a 0.6 nc c iss input capacitance 21 c oss output capacitance 10 c rss reverse transfer capacitance v ds =25v, v gs =0v, f=1mhz 2 pf t d(on) turn-on delay time 10.1 t r turn-on rise time 7.3 t d(off) turn-off delay time 31.3 t f turn-off fall time v dd =5v, r l =500 v ges =5v,r g =10 28.2 ns notes: . pulse test; pulse width Q 300us, duty cycle Q 2%. parameter symbol maximum ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v electrical characteristics (t j =25 unless otherwise specified) absolute maximum ratings (t a =25 unless otherwise noted) *
leshan radio company, ltd. rev .o 3/4 typical characteristics (t j =25 noted) l2n7002fwt1g,s-l2n7002fwt1g
leshan radio company, ltd. typical characteristics (t j =25 noted) rev .o 4/5 l2n7002fwt1g,s-l2n7002fwt1g
leshan radio company, ltd. rev .o 5/5 sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref l2n7002fwt1g,s-l2n7002fwt1g
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